INFRA-RED
1.
2.
2.1
2.2
Item No.: 127141 D
This specification applies to GaAlAs / GaAlAs LED Chips (substrate removed)
Structure
Mesa structure
Electrodes
p-side (anode)
n-side (cathode)
Au alloy
Au alloy
Wire bond contacts can also have a spider shape
3.
Outlines (dimensions in microns)
n-Electrode
n-Epitaxy GaAlAs
325
120
150
typ.
Active Layer
p-Epitaxy GaAlAs
p-Electrode
325
4.
Electrical and optical characteristics (T=25°C)
Parameter
Forward voltage
Reverse voltage
output Power *
Peak wavelength
Switching time
Symbol
V
F
V
R
Φ
e
λ
P
t
r
, t
f
Conditions
I
F
= 20 mA
I
R
= 10
µA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
min
1,60
5
2,5
719
typ
1,85
3,0
724
40/30
25
max
1,95
4,0
729
29
Unit
V
V
mW
nm
ns
ns
�½ band width
∆λ
I
F
= 20 mA
Power measurement at OSA on gold plate
5.
Packing
Dice on adhesive film with 1) wire bond side on top
2) back contact on top
6.
Labeling
Type
Lot No.
Φ
e
typ
min
max
Quantity
© 2004
OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 contact@osa-opto.com