Xeon 1 Power Infrared Emitter
LED
OSI3XAE1C1E
■
Features
●
■
Outline
Dimension
Highest luminous flux
6.3
●
●
Very long operating life
Superior ESD protection
●
●
●
Item
DC Forward Current
Pulse Forward Current*
Reverse Voltage
Power Dissipation
Operating Temperature
Storage Temperature
Lead Soldering Temperature
*Pulse width Max.10ms
■
Electrical
Symbol
I
F
I
FP
V
R
P
D
Topr
Tstg
Tsol
Value
1000
2000
5
1700
-30 ~ +85
-40~ +100
260
mA
mA
V
mW
Duty ratio max 1/10
Forward Current, I
F
(mA)
800
600
400
200
0
0
DC Reverse Current
Peak Wavelength
Radiant Power
50% Power Angle
λ
P
P
O
2θ
1/2
I
F
=350mA
I
F
=350mA
I
F
=350mA
-
110
-
850
-
120
-
-
-
nm
mW
deg
Note: Advises please attach heat sink to use if
Power Dissipation is more than 0.5W.
LED & Application Technologies
)
W/℃04=)a-J(htR
I
R
V
R
=5V
-
-
10
µA
W/℃02=)a-J(htR
DC Forward Voltage
V
F
I
F
=350mA
-
1.5
1.7
W/℃03=)a-J(htR
tinU
Item
Symbol
Condition
Min.
Typ.
Max.
V
■
)
)
)
)
(Ta=25
℃
℃
℃
℃
-Optical Characteristics
-
/5sec
Forward Operating Current (DC)
1200
1000
20
40
Ambient Temperature, T
A
(
0
0
℃
℃
)
)
)
)
(Ta=25
℃
℃
℃
℃
■
Absolute
Maximum Rating
■
Directivity
Unit
1
.
0
5
Outdoor./Indoor applications
mm03.0±:ecnareloT
mm:tinU
0
.
2
5.41
0
.
1
6
.
0
5
●
Camera
3
.
5
5.5
Night Vision
weiVkcaB
■
Applications
)-(edohtaC
) +( e d o n A
0.2
1
.
1
5
Super energy efficiency
℃
60
80
100