HIGH-POWER GaAlAs IR EMITTERS
OD-880W
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Wide emission angle to cover a large area
GLASS
.006 HIGH
MAX
.015
1.00
MIN.
ANODE
(CASE)
.209
.220
.183
.152
.187
.156
.017
.098
.112
.143
.150
.100
.041
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
CATHODE
.036
45°
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
Total Power Output, P
o
Radiant Intensity, I
e
PARAMETERS
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
18
TYP
20
16
80
80
30
17
MAX
UNITS
mW/sr
nm
nm
mW
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
880
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
5
1.55
1.9
Volts
Volts
pF
sec
sec
Deg
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Power Dissipation
1
190mW
100mA
5V
3A
Peak Forward Current (10 s, 400Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1Derate per Thermal Derating Curve above 25°C
2Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
-55°C TO 100°C
400°C/W Typical
135°C/W Typical
100°C
1Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2Air circulating at a rapid rate to keep case temperature at 25°C
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
Thermal Resistance, R
THJA
2