HIGH-POWER GaAlAs IR EMITTERS
1.00
MIN.
GLASS
DOME
.015
OD-880F
FEATURES
• High reliability liquid-phase epitaxially grown GaAlAs
• 880nm peak emission for optimum matching with
ODD-45W photodiode
• Wide range of linear power output
• Hermetically sealed TO-46 package
• Narrow angle for long distance applications
• OD-880F1 selected to meet minimum radiant intensity
ANODE
(CASE)
.209
.220
.183
.186
.152
.154
.017
.100
.041
.030
.040
.197
.205
CATHODE
.036
45°
All surfaces are gold plated. Dimensions are nominal
values in inches unless otherwise specified. Window
caps are welded to the case.
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
Radiant Intensity, I
e
OD-880F
OD-880F1
OD-880F
OD-880F1
TEST CONDITIONS
I
F
= 100mA
120
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
MIN
15
TYP
17
8
135
160
880
80
8
MAX
UNITS
mW
mW/sr
nm
nm
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Half Intensity Beam Angle,
Forward Voltage, V
F
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
5
1.55
30
17
1.9
Volts
Volts
pF
sec
sec
Deg
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C CASE
Continuous Forward Current
Reverse Voltage
Power Dissipation
1
190mW
100mA
5V
3A
Peak Forward Current (10 s, 400Hz)
2
Lead Soldering Temperature (1/16" from case for 10sec)
1
Derate per Thermal Derating Curve above 25°C
2
Derate linearly above 25°C
260°C
THERMAL PARAMETERS
Storage and Operating Temperature Range
Maximum Junction Temperature
Thermal Resistance, R
THJA
1
-55°C to 100°C
350°C/W Typical
115°C/W Typical
100°C
1
Heat transfer minimized by measuring in still air with minimum heat conducting through leads
2
Air circulating at a rapid rate to keep case temperature at 25°C
Thermal Resistance, R
THJA
2
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
