HIGH-POWER GaAlAs IR EMITTER CHIPS
FEATURES
OD-148-C
.014
• High reliability LPE GaAlAs IRLED chips
• Open center emission for imaging applications
• High output uniformity from emitting surfaces
.008
.014
• Gold contacts for high reliability bonding
EMITTING
SURFACE
GOLD
METALLIZATION
All dimensions are nominal values in inches unless
otherwise specified.
.002
GOLD
CONTACTS
N
P
.003
.005
RoHS
ELECTRO-OPTICAL CHARACTERISTICS AT 25°C
PARAMETERS
Total Power Output, P
o
TEST CONDITIONS
I
F
= 100mA
I
F
= 50mA
I
F
= 100mA
I
R
= 10 A
V
R
= 0V
5
MIN
6
TYP
8
880
80
30
17
MAX
UNITS
mW
nm
nm
Peak Emission Wavelength,
P
Spectral Bandwidth at 50%,
Forward Voltage, V
F
Capacitance, C
Rise Time
Fall Time
Reverse Breakdown Voltage, V
R
1.55
1.9
Volts
Volts
pF
sec
sec
0.5
0.5
ABSOLUTE MAXIMUM RATINGS AT 25°C
Power Dissipation
Continuous Forward Current
Reverse Voltage
190mW
100mA
5V
3A
Peak Forward Current (10 s, 300 Hz)
Storage and Operating Temperature Range
Maximum Junction Temperature
-65°
C to 150°C
150°C
The exact performance data depends on your package configuration and technique. Data listed in this specification is
for the chip mounted on a TO-46 header using silver epoxy as the die attach material. All sales are final after 60 days
from the shipment date. Opto Diode must be notified of any discrepancies within this period.
750 Mitchell Road, Newbury Park, California 91320
Phone: (805) 499-0335, Fax: (805) 499-8108
Email: sales@optodiode.com, Website: www.optodiode.com
OPTODIODE [ OPTODIODE CORP ]
