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OP793 参数 Datasheet PDF下载

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型号: OP793
PDF下载: 下载PDF文件 查看货源
内容描述: NPN河粉陈德良SIS器与基线发射极电阻 [NPN Pho to tran sis tor with Base- Emitter Resistor]
分类和应用:
文件页数/大小: 3 页 / 253 K
品牌: OPTEK [ OPTEK TECHNOLOGIES ]
 浏览型号OP793的Datasheet PDF文件第2页浏览型号OP793的Datasheet PDF文件第3页  
Prod uct Bul le tin OP793, OP798
Sep tem ber 1999
NPN Phototransistor with Base-Emitter Resistor
Types OP793, OP798 Series
OP793
OP798
NOTE: Dimensions not shown on OP798
are common with OP793.
Dimensions are in inches (millimeters).
Features
Variety of sensitivity ranges
TO-18 equivalent package style
Base-emitter resistor provides ambient
light protection
Ab so lute Maxi mum Rat ings
(T
A
= 25
o
C un less oth er wise noted)
Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Emit ter Re verse Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Con tinu ous Col lec tor Cur rent . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Stor age and Op er at ing Tem pera ture Range . . . . . . . . . . . . . . . . . . -40
o
C to +100
o
C
Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing
iron] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260
o
C
(1)
Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mW
(2)
Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
Max. 20 grams force may be applied to leads when soldering.
(2) Derate linearly 3.33 mW/
o
C above 25
o
C.
(3) V
CE
= 5 V. Light source is an unfiltered GaAlAs emitting diode operating at peak emission
wavelength of 890 nm and E
e(APT)
of 1.7 mW/cm
2
average within a .250" dia. aperture.
(4) The knee point irradiance is defined as the irradiance required to increase I
C(ON)
to 50
µA.
Description
The OP793/OP798 series consists of
NPN silicon phototransistors molded in
dark blue epoxy packages. These
devices are 100% production tested
using infrared light for close correlation
with Optek’s GaAs and GaAlAs emitters.
The phototransistor has an internal base-
emitter resistor which provides protection
from low level ambient lighting
conditions. This feature is also useful
when the media being detected is semi-
transparent to infrared light in interruptive
applications.
Typi cal Per form ance Curves
Typi cal Spec tral Re sponse
Schematic
Wave length - nm
Op tek Tech nol ogy, Inc.
1215 W. Crosby Road
Car roll ton, Texas 75006
(972) 323- 2200
Fax (972) 323- 2396