Product Bulletin HCT802
September 1996
Dual Enhancement Mode MOSFET
Types HCT802, HCT802TX, HCT802TXV
Features
•
6 pad surface mount package
•
V
DS
= 90V
•
R
DS(on)
<5Ω
•
I
D(on)
N-Channel = 1.5A
•
Two devices selected for V
DS
, I
D(on)
•
Full TX Processing Available
•
Gold plated contacts
Description
HCT802 offers an N-Channel and P-
Channel MOS transistor in a hermetic
ceramic surface mount package. The
devices used are similar to industry
standards 2N6661 N-Channel device
and VP1008 P-Channel device. These
two enhancement mode MOSFETS
are particularly well matched for V
DS
,
I
DS(on)
, R
DS(on)
and G
fs
.
Order HCT802TX for processing per
MIL-PRF-19500. Typical screening
and lot acceptance tests are provided
on page 13-4. TX products receive a
V
GS
HTRB at 16 V for 48 hrs. at 150
o
C and a V
DS
HTRB at 72 V for 160 hrs.
at 150
o
C.
and R
DS(on)
similarity
P-Channel = 1.1A
Absolute Maximum Ratings
Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±20
V
Drain Current (Limited by Tj max) N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 A
P-Channel. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . -55
o
C to +150
o
C
Power Dissipation
T
A
= 25
o
C (Both devices equally driven) . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 W Total
T
S
= 25
o
C (Both devices equally driven). . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W Total
(1)
(Ts = Substrate that the package is soldered to)
Notes
(1) This rating is provided as an aid to designers. It is dependent upon mounting material and
methods and is not measureable as an outgoing test.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
15-34
(972) 323-2200
Fax (972) 323-2396
OPTEK [ OPTEK TECHNOLOGIES ]
