Types HCT802, HCT802TX, HCT802TXV
Electrical Characteristics
(T
A
= 25
o
C unless specified otherwise)
Symbol
B
VDSS
V
TH
Parameters
Drain-Source Breakdown
Gate Threshold Voltage
Device
B=Both
B
N
P
I
GSS
I
DSS
Gate-Body Leakage
Zero Gate Voltage Drain Current
B
B
B
I
D(on)
On-State Drain Current
N
P
R
DS(on)
Drain-Source on Resistance
G
fs
Forward Transconductance
B
N
P
C
ISS
Input Capacitance
N
P
C
OSS
Common Source Output Capaci-
tance
Reverse Transfer Capacitance
N
P
N
P
t
(on)
Turn-on-time
N
P
t
(off)
Turn-off-time
N
P
* Reverse polarity for P-Channel device
170
200
70
150
40
60
10
25
15
50
17
50
1.5
-1.1
5
Min
90*
0.75
-2.0
2.5
-4.5
±100
10*
500*
Max
Units
V
V
V
nA
µA
µA
A
A
Ω
Test Conditions
I
D
= 10
µA*,
V
GS
= 0
V
GS
= V
DS
, I
D
= 1 mA
I
D
= -1 mA
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 90 V*, V
GS
= 0 V
Tj = 150
o
C
V
DS
= 25 V, V
GS
= 10 V
V
DS
= -15 V, V
GS
= -10 V
V
GS
= 10 V*, I
D
= 1 A*
mmho V
DS
= 25 V, I
D
= 0.5 A
mmho V
DS
= -10 V, I
D
= -0.5 A
pf
pf
pf
pf
pf
pf
ns
ns
ns
ns
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= -25 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 25 V, V
GS
= 0 A, f = 1 MHz
V
DS
= -25 V, V
GS
= 0 A, f = 1 MHz
V
DD
= 25 V, I
D
= 1 A, R
L
= 50
Ω
V
DD
= -25 V, I
D
= -0.5 A, R
L
= 50
Ω
V
DD
= 25 V, I
D
= 1 A, R
L
= 50
Ω
V
DD
= -25 V, I
D
= -0.5 A, R
L
= 50
Ω
C
RSS
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-35
OPTEK [ OPTEK TECHNOLOGIES ]
