欢迎访问ic37.com |
会员登录 免费注册
发布采购

HCT7000M 参数 Datasheet PDF下载

HCT7000M图片预览
型号: HCT7000M
PDF下载: 下载PDF文件 查看货源
内容描述: N-沟道增强型MOS利用Transis器 [N- Channel Enhancement Mode MOS Transis tor]
分类和应用:
文件页数/大小: 2 页 / 238 K
品牌: OPTEK [ OPTEK TECHNOLOGIES ]
 浏览型号HCT7000M的Datasheet PDF文件第1页  
Types HCT7000M, HCT7000MTX, HCT7000MTXV
Electrical Characteristics
(T
A
= 25
o
C unless otherwise noted)
SYMBOL
V
DSS
V
GS(TH)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
V
DS(ON)
G
fs
C
iss
C
oss
C
rss
t(on)
PARAMETER
Drain-Source Voltage
Gate Threshold Voltage
Gate Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source on-Resistance
Drain-Source on-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
MIN MAX UNITS
60
.8
3.0
±10
1
75
5
2.5
100
60
25
5
10
10
V
V
nA
µ
TEST CONDITION
V
GS
= 0 V, I
D
= 10
µA
V
DS
= V
GS
, I
D
= 1 mA
V
DS
= 0 V, V
GS
=
±15
V
V
GS
= 0 V, V
DS
= 48 V
V
DS
= 10 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 0.5 A
V
GS
= 10 V, I
D
= 0.5 A
V
DS
= 10 V, I
D
= 0.2 A
V
DS
= 25 V, V
GS
= 0 V, f = 1MHz
A
mA
V
mS
pF
pF
pF
ns
ns
V
DD
= 15 V, I
D
= 0.5 A, V
gen
= 10 V, R
g
= 25
t
(off)
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Optek Technology, Inc.
1215 W. Crosby Road
Carrollton, Texas 75006
(972)323-2200
Fax (972)323-2396
15-37