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ULN2003ADR2G 参数 Datasheet PDF下载

ULN2003ADR2G图片预览
型号: ULN2003ADR2G
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,大电流达林顿晶体管阵列 [High Voltage, High Current Darlington Transistor Arrays]
分类和应用: 晶体小信号双极晶体管达林顿晶体管开关光电二极管PC
文件页数/大小: 5 页 / 78 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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ULN2003A, ULQ2003A
MAXIMUM RATINGS
(T
A
= 25°C, and rating apply to any one device in the package, unless otherwise noted.)
Rating
Output Voltage
Input Voltage
Collector Current - Continuous
Base Current - Continuous
Operating Ambient Temperature Range
ULN2003A
ULQ2003A
Storage Temperature Range
Junction Temperature
Thermal Resistance, Junction-to-Ambient
Case 751B, D Suffix
Thermal Resistance, Junction-to-Case
Case 751B, D Suffix
Electrostatic Discharge Sensitivity (ESD)
Human Body Model (HBM)
Machine Model (MM)
Charged Device Model (CDM)
Symbol
V
O
V
I
I
C
I
B
T
A
-20 to +85
-40 to +85
T
stg
T
J
R
qJA
100
R
qJC
20
ESD
2000
400
1500
V
°C/W
-55 to +150
150
°C
°C
°C/W
Value
50
30
500
25
Unit
V
V
mA
mA
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
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