UC3842A/3843A
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
PARAMETER
Supply Voltage(Low Impedance Source)
Supply Voltage(I
CC
<30mA)
Output Current ( Peak )
Output Energy (capacity Load)
Analog Inputs(pin 2,3)
Error Amplifier Output Sink Current
SYMBOL
V
CC
V
CC
I
O(PEAK)
LINEAR INTEGRATED CIRCUIT
UNIT
V
V
A
5
µJ
V
I(ANA)
-0.3 ~ +6.3
V
I
SINK(EA)
10
mA
DIP-8
1.0
W
Power Dissipation( Ta≦25°C)
P
D
0.5
W
SOP-8
Derated at Ta>25°C
P
D
8
mW/°C
Junction Temperature
T
J
+150
°C
Storage Temperature
T
STG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device which the device could be permanently
damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RATINGS
30
Self Limiting
±1
ELECTRICAL CHARACTERISTICS
(0°C≦Ta≦70°C, V
CC
=15V, R
T
=10kΩ, C
T
=3.3nF, unless otherwise specified)
PARAMETER
Reference Section
Output Voltage
Line Regulation
Load Regulation
Temperature Stability
Total Output Variation
Output Noise Voltage
Long Term Stability
Output Short Circuit
Oscillator Section
Initial Accuracy
Voltage Stability
Temperature Stability
Amplitude
Error Amplifier Section
Input Voltage
Input Bias Current
AVOL
Unity Gain Bandwidth
PSRR
Output Sink Current
Output Source Current
V
OUT
High
V
OUT
Low
SYMBOL
V
REF
∆V
REF
∆V
REF
TEST CONDITIONS
T
J
=25°C,I
OUT
=1mA
12≦V
IN
25V
1≦I
OUT
=20mA
(Note 1)
Line, Load, Temp(Note 1)
10Hz≦f≦10kHz,T
J
=25°C (Note 1)
Ta=25°C,1000Hrs(Note 1)
MIN
4.9
TYP
5
6
6
0.2
50
5
-100
52
0.2
5
1.7
2.50
-0.3
90
1
70
6
-0.8
6
0.7
MAX
5.1
20
25
0.4
5.18
25
-180
57
1
UNIT
V
mV
mV
mV/°C
V
µV
mV
mA
kHz
%
%
V
V
µA
dB
MHz
dB
mA
mA
V
V
4.82
Vosc
I
SC
-30
47
f
T
J
=25°C
∆f/∆Vcc
12≦V
CC
≦25V
Tmin≦T
a
≦Tmax(Note
1)
Vosc
Vpin 4 peak to peak
V
I(EA)
I
I(BIAS)
Vpin 1=2.5V
2
≦V
OUT
≦4V
T
J
=25°C (Note 1)
I2≦V
CC
≦25V
Vpin 2=2.7V,Vpin 1=1.1V
Vpin 2=2.3V,Vpin 1=5V
Vpin 2=2.3V, R
L
=15kΩ to GND
Vpin 2=2.7V,Vpin 1=1.1V
2.42
60
0.7
60
2
-0.5
5
2.58
-2
I
O(SINK)
I
O(SOURCE)
V
OH
V
OL
1.1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 9
QW-R103-002,D
ONSEMI [ ON SEMICONDUCTOR ]
