TL431, A, B Series, NCV431A, B
Symbol
Cathode
(K)
Reference
(R)
800
Anode
(A)
Reference
(R)
800
20 pF
Representative Schematic Diagram
Component values are nominal
Cathode (K)
Representative Block Diagram
Reference
(R)
Cathode
(K)
2.4 k
3.28 k
20 pF
7.2 k
150
4.0 k
10 k
+
−
2.5 V
ref
1.0 k
800
Anode (A)
Anode (A)
This device contains 12 active transistors.
MAXIMUM RATINGS
(Full operating ambient temperature range applies, unless otherwise noted.)
Rating
Cathode to Anode Voltage
Cathode Current Range, Continuous
Reference Input Current Range, Continuous
Operating Junction Temperature
Operating Ambient Temperature Range
TL431I, TL431AI, TL431BI
TL431C, TL431AC, TL431BC
NCV431AI, NCV431B, TL431BV
Storage Temperature Range
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C Ambient Temperature
D, LP Suffix Plastic Package
P Suffix Plastic Package
DM Suffix Plastic Package
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C Case Temperature
D, LP Suffix Plastic Package
P Suffix Plastic Package
ESD Rating
Symbol
V
KA
I
K
I
ref
T
J
T
A
−40 to +85
0 to +70
−40 to +125
T
stg
P
D
0.70
1.10
0.52
P
D
1.5
3.0
HBM
MM
>2000
>200
V
W
−65 to +150
°C
W
Value
37
−100 to +150
−0.05 to +10
150
Unit
V
mA
mA
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
RECOMMENDED OPERATING CONDITIONS
Condition
Cathode to Anode Voltage
Cathode Current
Symbol
V
KA
I
K
Min
V
ref
1.0
Max
36
100
Unit
V
mA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
D, LP Suffix
Package
178
83
P Suffix
Package
114
41
DM Suffix
Package
240
−
Unit
°C/W
°C/W
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
