TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.06
VCE = 2.0 V
TJ = 150°C
25°C
2.0
TJ = 25°C
1.6
1.2
IC = 1.0 A
2.5 A
5.0 A
0.8
– 55°C
0.4
0
10
20
30
50
100
200 300
IB, BASE CURRENT (mA)
500
1000
0.1
0.2 0.3 0.4 0.6
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
2.0
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
TJ = 25°C
1.6
V, VOLTAGE (VOLTS)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
– 0.5
– 1.0
– 1.5
– 2.0
– 2.5
0.06
0.1
0.2 0.3
0.5
θ
VB FOR VBE
– 55°C to + 25°C
1.0
2.0 3.0 4.0
6.0
*
θ
VC FOR VCE(sat)
+ 25°C to + 150°C
– 55°C to + 25°C
+ 25°C to + 150°C
*APPLIES FOR IC/IB
≤
hFE/4
1.2
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.06
0.1
0.2 0.3 0.4
0.6
1.0
2.0 3.0 4.0
6.0
0.8
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
R BE , EXTERNAL BASE–EMITTER RESISTANCE (OHMS)
Figure 11. Temperature Coefficients
103
IC, COLLECTOR CURRENT (
µ
A)
102
101
100
10–1
10–2
REVERSE
IC = ICES
FORWARD
VCE = 30 V
TJ = 150°C
100°C
25°C
10 M
VCE = 30 V
1.0 M
IC
≈
ICES
IC = 10 x ICES
100 k
10 k
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
20
40
60
80
100
120
140
160
1.0 k
10–3
– 0.3 – 0.2 – 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
+ 0.7
0.1 k
VBE, BASE–EMITTER VOLTAGE (VOLTS)
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut–Off Region
Figure 13. Effects of Base–Emitter Resistance
4
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ON SEMICONDUCTOR ]
