TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
D = 0.5
0.2
0.1
0.05
0.02
Z
qJC(t)
= r(t) R
qJC
R
qJC
(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
− T
C
= P
(pk)
Z
qJC(t)
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
50
P
(pk)
t
1
t
2
SINGLE PULSE
0.05
1.0
DUTY CYCLE, D = t
1
/t
2
100
200
500
1.0 k
0.02
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
5.0 ms
SECONDARY BREAKDOWN
LIMITED @ T
J
≤
150°C
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED V
CEO
TIP31C, TIP32C
1.0 ms
100
ms
0.5
0.2
0.1
5.0
10
20
50
100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Figure 5. Active Region Safe Operating Area
3.0
2.0
1.0
t, TIME (
μ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
t
s
′
t
f
@ V
CC
= 30 V
CAPACITANCE (pF)
I
B1
= I
B2
I
C
/I
B
= 10
t
s
′
= t
s
− 1/8 t
f
T
J
= 25°C
300
T
J
= +25°C
200
t
f
@ V
CC
= 10 V
100
70
50
30
0.1
C
eb
C
cb
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
3.0
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn−Off Time
Figure 7. Capacitance
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