TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
SINGLE PULSE
0.02
0.05
1.0
0.2
0.5
1.0
D = 0.5
0.2
0.1
0.05
0.02
Z
θJC(t)
= r(t) R
θJC
R
θJC
(t) = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) Z
θJC(t)
2.0
5.0
t, TIME (ms)
10
20
50
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500
1.0 k
Figure 4. Thermal Response
10
IC, COLLECTOR CURRENT (AMP)
5.0
5.0 ms
2.0
1.0
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ
≤
150°C
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
CURVES APPLY
TIP31B, TIP32B
BELOW RATED VCEO
TIP31C, TIP32C
1.0 ms
100
µs
0.2
0.1
5.0
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on T J(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C. T J(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
10
20
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
Figure 5. Active Region Safe Operating Area
3.0
2.0
ts
′
1.0
t, TIME (
µ
s)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.03
tf @ VCC = 30 V
300
IB1 = IB2
IC/IB = 10
ts
′
= ts – 1/8 tf
TJ = 25°C
TJ = + 25°C
200
CAPACITANCE (pF)
tf @ VCC = 10 V
100
Ceb
70
50
Ccb
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
3.0
30
0.1
0.2 0.3
10
0.5
1.0
2.0 3.0 5.0
VR, REVERSE VOLTAGE (VOLTS)
20 30 40
Figure 6. Turn–Off Time
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3–3
ONSEMI [ ON SEMICONDUCTOR ]
