TIP140 TIP141 TIP142 TIP145 TIP146 TIP147
ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
20
IC, COLLECTOR CURRENT (AMP) (mA)
10
7.0
5.0
3.0
2.0
1.0
dc
TJ = 150°C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
TIP140, 145
TIP141, 146
TIP142, 147
20
30
50
15
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMPS)
15
10
7.0
5.0
100 mJ
The data of Figure 6 is based on T J(pk) = 150
_
C; TC is
variable depending on conditions. At high case temper-
atures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
2.0
0.2
10
1.0
100
0.5 1.0
2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)
50
100
Figure 6. Active–Region Safe Operating Area
VCE MONITOR
MPS–U52
RBB1
INPUT
50
50
1.5 k
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
100 mH
TUT
VCC = 20 V
IC
MONITOR
RS = 0.1
Figure 7. Unclamped Inductive Load
w
≈
7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
INPUT
VOLTAGE
COLLECTOR
CURRENT
1.42 A
VCE(sat)
– 20 V
COLLECTOR
VOLTAGE
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
Figure 8. Inductive Load
100
70
50
PNP
20
10
7.0
5.0
NPN
PNP
NPN
5.0
PD, POWER DISSIPATION (WATTS)
VCE = 10 V
IC = 1.0 A
TJ = 25°C
hfe , SMALL–SIGNAL FORWARD CURRENT
TRANSFER RATIO
4.0
3.0
2.0
2.0
1.0
1.0
1.0
0
2.0
3.0
5.0
f, FREQUENCY (MHz)
7.0
10
0
40
80
120
160
TA, FREE–AIR TEMPERATURE (°C)
200
Figure 9. Magnitude of Common Emitter
Small–Signal Short–Circuit Forward
Current Transfer Ratio
4
Figure 10. Free–Air Temperature
Power Derating
Motorola Bipolar Power Transistor Device Data
ONSEMI [ ON SEMICONDUCTOR ]
