TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP)
20
IC, COLLECTOR CURRENT (AMP)
10
5.0
2.0
1.0
0.5
0.2
0.1
500
ms
dc
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
1 ms
@ T
C
= 25°C (SINGLE PULSE)
5 ms
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
2.0 3.0
5.0 7.0 10
20 30
50
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
70 100
100
ms
0.05
0.02
1.0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
Figure 5. Active−Region Safe Operating Area
10,000
h fe , SMALL−SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
T
C
= 25°C
V
CE
= 4.0 Vdc
I
C
= 3.0 Adc
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C
ob
100
70
50
PNP
NPN
0.2
0.5 1.0 2.0
5.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
C
ib
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
30
0.1
Figure 6. Small−Signal Current Gain
Figure 7. Capacitance
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