TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)
ACTIVE−REGION SAFE−OPERATING AREA
10
10
4.0
2.0
4.0
1ꢂms
5ꢂms
dc
2.0
1.0
T = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED
J
T = 150°C
J
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
@ T = 25°C (SINGLE PULSE)
SECONDARY BREAKDOWN LIMITED
C
@ T = 25°C (SINGLE PULSE)
C
SECONDARY BREAKDOWN LIMITED
TIP115
TIP116
TIP117
TIP110
TIP111
TIP112
CURVES APPLY BELOW
RATED V
CURVES APPLY BELOW
RATED V
CEO
CEO
0.1
1.0
0.1
1.0
10
40 60 80 100
10
60 80 100
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CE
CE
Figure 5. TIP115, 116, 117
Figure 6. TIP110, 111, 112
200
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
T
= 25°C
C
breakdown. Safe operating area curves indicate I − V
C
CE
100
70
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
50
The data of Figures 5 and 6 is based on T
T is variable depending on conditions. Second breakdown
C
= 150_C;
J(pk)
C
ob
30
20
C
pulse limits are valid for duty cycles to 10% provided T
ib
J(pk)
< 150_C.
T
may be calculated from the data in
J(pk)
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6 1.0 2.0
4.0 6.0 10
20
40
V , REVERSE VOLTAGE (VOLTS)
R
Figure 7. Capacitance
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