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TIP111G 参数 Datasheet PDF下载

TIP111G图片预览
型号: TIP111G
PDF下载: 下载PDF文件 查看货源
内容描述: 塑料中功率互补硅晶体管 [Plastic Medium-Power Complementary Silicon Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 100 K
品牌: ONSEMI [ ONSEMI ]
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TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP)  
ACTIVE−REGION SAFE−OPERATING AREA  
10  
10  
4.0  
2.0  
4.0  
1ꢂms  
5ꢂms  
dc  
2.0  
1.0  
T = 150°C  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
J
T = 150°C  
J
dc  
1.0  
BONDING WIRE LIMITED  
THERMALLY LIMITED  
@ T = 25°C (SINGLE PULSE)  
SECONDARY BREAKDOWN LIMITED  
C
@ T = 25°C (SINGLE PULSE)  
C
SECONDARY BREAKDOWN LIMITED  
TIP115  
TIP116  
TIP117  
TIP110  
TIP111  
TIP112  
CURVES APPLY BELOW  
RATED V  
CURVES APPLY BELOW  
RATED V  
CEO  
CEO  
0.1  
1.0  
0.1  
1.0  
10  
40 60 80 100  
10  
60 80 100  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
V
, COLLECTOR−EMITTER VOLTAGE (VOLTS)  
CE  
CE  
Figure 5. TIP115, 116, 117  
Figure 6. TIP110, 111, 112  
200  
There are two limitations on the power handling ability of  
a transistor: average junction temperature and second  
T
= 25°C  
C
breakdown. Safe operating area curves indicate I − V  
C
CE  
100  
70  
limits of the transistor that must be observed for reliable  
operation; i.e., the transistor must not be subjected to greater  
dissipation than the curves indicate.  
50  
The data of Figures 5 and 6 is based on T  
T is variable depending on conditions. Second breakdown  
C
= 150_C;  
J(pk)  
C
ob  
30  
20  
C
pulse limits are valid for duty cycles to 10% provided T  
ib  
J(pk)  
< 150_C.  
T
may be calculated from the data in  
J(pk)  
Figure 4. At high case temperatures, thermal limitations will  
reduce the power that can be handled to values less than the  
limitations imposed by second breakdown.  
PNP  
NPN  
10  
0.04 0.06 0.1  
0.2  
0.4 0.6 1.0 2.0  
4.0 6.0 10  
20  
40  
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 7. Capacitance  
http://onsemi.com  
5