TIP100, TIP101, TIP102
(NPN); TIP105, TIP106,
TIP107 (PNP)
TIP101, TIP102, TIP106 and TIP107 are Preferred Devices
Plastic Medium−Power
Complementary Silicon
Transistors
Designed for general−purpose amplifier and low−speed switching
applications.
Features
http://onsemi.com
•
High DC Current Gain −
•
= 2500 (Typ) @ I
C
= 4.0 Adc
Collector−Emitter Sustaining Voltage − @ 30 mAdc
V
CEO(sus)
= 60 Vdc (Min) − TIP100, TIP105
= 80 Vdc (Min) − TIP101, TIP106
= 100 Vdc (Min) − TIP102, TIP107
Low Collector−Emitter Saturation Voltage −
V
CE(sat)
= 2.0 Vdc (Max) @ I
C
= 3.0 Adc
= 2.5 Vdc (Max) @ I
C
= 8.0 Adc
Monolithic Construction with Built−in Base−Emitter Shunt Resistors
Pb−Free Packages are Available*
h
FE
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80−100 VOLTS, 80 WATTS
MARKING
DIAGRAM
4
•
TO−220AB
CASE 221A
STYLE 1
1
2
3
TIP10xG
AYWW
•
•
TIP10x
x
A
Y
WW
G
= Device Code
= 0, 1, 2, 5, 6, or 7
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
1
August, 2005 − Rev. 11
Publication Order Number:
TIP100/D
ONSEMI [ ON SEMICONDUCTOR ]
