BC846ALT1G Series,
SBC846ALT1G Series
General Purpose
Transistors
NPN Silicon
Features
•
Moisture Sensitivity Level: 1
•
ESD Rating
−
Human Body Model: >4000 V
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
ESD Rating
−
Machine Model: >400 V
•
AEC−Q101 Qualified and PPAP Capable
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Collector−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Emitter−Base Voltage
BC846, SBC846
BC847, BC850, SBC847
BC848, BC849, SBC848
Collector Current
−
Continuous
Symbol
V
CEO
Value
65
45
30
Vdc
80
50
30
Vdc
6.0
6.0
5.0
100
mAdc
Unit
Vdc
3
1
2
V
CBO
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
V
EBO
XX M
G
G
1
XX
M
G
= Device Code
= Date Code*
= Pb−Free Package
I
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board,
(Note 1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 1)
Total Device Dissipation
Alumina Substrate (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient (Note 2)
Junction and Storage
Temperature Range
Symbol
P
D
Max
225
Unit
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1.8
R
qJA
P
D
556
300
mW/°C
°C/W
mW
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 12 of this data sheet.
2.4
R
qJA
T
J
, T
stg
417
−55
to
+150
mW/°C
°C/W
°C
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
November, 2011
−
Rev. 11
1
Publication Order Number:
BC846ALT1/D
ONSEMI [ ON SEMICONDUCTOR ]
