RHRP8120
Data Sheet
November 2013
Features
8 A, 1200 V, Hyperfast Diode
• Hyperfast Recovery trr = 70 ns (@ IF= 8 A)
• Max Forward Voltage, VF = 3.2 V (@ TC = 25°C)
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
The RHRP8120 is a hyperfast diode with soft recovery
characteristics. It has the half recovery time of ultrafast
diodes and is silicon nitride passivated ionimplanted
epitaxial planar construction. These devices are
intended to be used as freewheeling/ clamping diodes
and diodes in a variety of switching power supplies and
other power switching applications. Their low stored
charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits
reducing power loss in the switching transistors.
• RoHS Compliant
Applications
• Switching Power Supplies
• Power Switching Circuits
• General Purpose
Ordering Information
Packaging
PART NUMBER
PACKAGE
BRAND
RHRP8120
JEDEC TO-220AC
RHRP8120
TO-220AC-2L
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
CATHODE
(FLANGE)
Symbol
K
A
o
Absolute Maximum Ratings
T
= 25 C, Unless Otherwise Specified
C
RHRP8120
1200
UNIT
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
V
A
RRM
RWM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
1200
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
1200
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
8
F(AV)
o
(T = 140 C)
C
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Square Wave, 20 kHz)
16
A
A
FRM
FSM
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
(Halfwave, 1 Phase, 60 Hz)
100
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
75
20
W
D
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
mJ
AVL
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
, T
STG
-65 to 175
C
J
©2001 Semiconductor Components Industries, LLC.
November-2017, Rev. 3
Publication Order Number:
RHRP8120/D
1
ONSEMI [ ONSEMI ]
