PS2501 - 1, -2, -4, PS2501L -1, -2, -4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
Diode
I
F
V
R
∆P
D
/°C
P
D
I
F (PEAK)
PARAMETERS
UNITS
RATINGS
PS2501-1
PS2501-2,4
PS2501L-1
PS2501L-2, 4
80
6
1.5
150
1
80
6
1.2
120
1
Forward Current
mA
Reverse Voltage
V
Power Dissipation Derating mW/°C
Power Dissipation
mW/Ch
Peak Forward Current
(PW = 100
µs,
Duty Cycle 1%)
Collector to Emitter Voltage
Emitter to Collector Voltage
Collector Current
A
Transistor
V
CEO
V
ECO
I
C
∆P
C
/°C
P
C
Coupled
BV
T
STG
T
OPT
T
SOL
P
T
V
V
mA
80
7
50
1.5
150
5000
-55 to +150
-55 to +100
260
250
80
7
50
1.2
120
5000
-55 to +150
-55 to +100
260
200
Power Dissipation Derating mW/°C
Power Dissipation
mW/Ch
Isolation Voltage
2
Storage Temperature
Operating Temperature
Lead Temperature
(Soldering 10 s)
Total Power Dissipation
V
r.m.s.
°C
°C
°C
mW/Ch
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. AC voltage for 1 minute at T
A
= 25
°C,
RH = 60 % between input
and ouput.
TYPICAL PERFORMANCE CURVES
(T
A
= 25
°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
150
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Transistor Power Dissipation, P
C
(mW)
150
Diode Power Dissipation, P
D
(mW)
PS2501-1
PS2501L-1
100
PS2501-2
PS2501-4
PS2501L-2
PS2501L-4
50
1.2 mW/˚C
1.5 mW/˚C
PS2501-1
PS2501L-1
100
PS2501-2
PS2501-4
PS2501L-2
PS2501L-4
50
1.2 mW/˚C
1.5 mW/˚C
0
25
50
75
100
125
150
0
25
50
75
100
125
150
Ambient Temperature, T
A
(°C)
Ambient Temperature, T
A
(°C)
ONSEMI [ ON SEMICONDUCTOR ]
