NTD4302
TYPICAL CHARACTERISTICS
50
I
D
, DRAIN CURRENT (AMPS)
40
30
20
10
0
V
GS
= 4 V
V
GS
= 4.4 V
V
GS
= 4.6 V
V
GS
= 5 V
V
GS
= 7 V
V
GS
= 10 V
V
GS
= 2.8 V
0
0.5
1
1.5
2
V
GS
= 3.4 V
V
GS
= 3.2 V
V
GS
= 3.0 V
2.5
3
T
J
= 25°C
V
GS
= 3.8 V
I
D
, DRAIN CURRENT (AMPS)
60
V
DS
> = 10 V
50
40
30
20
10
0
T
J
= 25°C
T
J
= 100°C
T
J
=
−55°C
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.1
I
D
= 10 A
T
J
= 25°C
0.015
T
J
= 25°C
V
GS
= 4.5 V
0.075
0.01
0.05
0.005
V
GS
= 10 V
0.025
0
0
2
4
6
8
10
0.00E+00
0
1.00E+01
2.00E+01
3.00E+01
4.00E+01
5.00E+01
6.00E+01
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs.
Gate−To−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
10000
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
I
D
= 18.5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
1.4
1.2
1
I
DSS
, LEAKAGE (nA)
1000
100
T
J
= 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
1
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
http://onsemi.com
3
Figure 6. Drain−To−Source Leakage
Current vs. Voltage
ONSEMI [ ON SEMICONDUCTOR ]
