NTBG015N065SC1
TYPICAL CHARACTERISTICS (continued)
10000
20
V
DD
= 390 V
I
D
= 75 A
C
iss
15
10
V
= 650 V
DD
1000
100
10
V
DD
= 520 V
C
oss
5
0
C
rss
f = 1 MHz
= 0 V
V
GS
−5
650
0.1
1
10
100
0
50
100
150
200
250
300
350
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate−to−Source Voltage vs. Total
Figure 8. Capacitance vs. Drain−to−Source
Charge
Voltage
100
160
120
80
V
GS
= 18 V
T = 25°C
J
10
40
0
Typical performance based
on characterization data
R
= 0.3°C/W
q
JC
1
25
50
75
100
125
150
175
0.001 0.01
0.1
1
t , TIME IN AVALANCHE (ms)
AV
T , CASE TEMPERATURE (°C)
C
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
1000
100
10
100000
10000
Single Pulse
R
= 0.3°C/W
q
JC
T
C
= 25°C
10 ms
100 ms
1 ms
1000
100
10 ms
Single Pulse
T = 175°C
1
J
R
= 0.3°C/W
q
JC
DC
T
C
= 25°C
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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