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NTBG015N065SC1 参数 Datasheet PDF下载

NTBG015N065SC1图片预览
型号: NTBG015N065SC1
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L]
分类和应用:
文件页数/大小: 8 页 / 323 K
品牌: ONSEMI [ ONSEMI ]
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NTBG015N065SC1  
TYPICAL CHARACTERISTICS  
280  
240  
200  
160  
120  
80  
4
15 V  
V
= 18 V  
GS  
V
= 12 V  
GS  
12 V  
3
2
15 V  
18 V  
10 V  
1
0
9 V  
40  
0
8 V  
0
1
2
3
4
5
6
7
8
9
10  
0
40  
80  
120  
160  
200  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 1. OnRegion Characteristics  
Figure 2. Normalized OnResistance vs. Drain  
Current and Gate Voltage  
100  
80  
60  
40  
20  
0
1.6  
1.4  
1.2  
I
D
= 75 A  
I
V
= 75 A  
D
= 18 V  
GS  
T = 150°C  
J
1.0  
0.8  
T = 25°C  
J
8
10  
12  
14  
16  
18  
75 50 25  
0
25 50 75 100 125 150 175  
T , JUNCTION TEMPERATURE (°C)  
J
V
GS  
, GATETOSOURCE VOLTAGE (V)  
Figure 3. OnResistance Variation with  
Figure 4. OnResistance vs. GatetoSource  
Temperature  
Voltage  
280  
240  
200  
160  
120  
80  
280  
100  
T = 175°C  
J
V = 0 V  
GS  
V
DS  
= 10 V  
T = 175°C  
J
T = 55°C  
J
T = 25°C  
J
T = 55°C  
J
T = 25°C  
J
10  
1
40  
0
3
6
9
12  
15  
2
4
6
8
V
GS  
, GATETOSOURCE VOLTAGE (V)  
V
SD  
, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure 6. Diode Forward Voltage vs. Current  
www.onsemi.com  
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