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NTBG015N065SC1 参数 Datasheet PDF下载

NTBG015N065SC1图片预览
型号: NTBG015N065SC1
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L]
分类和应用:
文件页数/大小: 8 页 / 323 K
品牌: ONSEMI [ ONSEMI ]
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NTBG015N065SC1  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)(continued)  
J
Parameter  
DRAINSOURCE DIODE CHARACTERISTICS  
Reverse Recovery Time  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
t
V
= 5/18 V, I = 75 A,  
28  
234  
23  
ns  
nC  
mJ  
A
RR  
GS  
S
SD  
dI /dt = 1000 A/ms  
Reverse Recovery Charge  
Reverse Recovery Energy  
Peak Reverse Recovery Current  
Charge Time  
Q
RR  
E
REC  
I
16  
RRM  
Ta  
17  
ns  
ns  
Discharge Time  
Tb  
11  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
www.onsemi.com  
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