NTBG015N065SC1
THERMAL CHARACTERISTICS
Parameter
Symbol
Max
0.3
40
Unit
°C/W
°C/W
Thermal Resistance Junction−to−Case (Note 2)
Thermal Resistance Junction−to−Ambient (Notes 1, 2)
R
θ
JC
JA
R
θ
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
V
GS
= 0 V, I = 1 mA
650
V
(BR)DSS
D
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
/T
J
I = 20 mA, refer to 25°C
D
0.12
V/°C
(BR)DSS
Zero Gate Voltage Drain Current
I
V
V
= 0 V,
= 650 V
T = 25°C
10
1
mA
mA
nA
DSS
GS
J
DS
T = 175°C
J
Gate−to−Source Leakage Current
ON CHARACTERISTICS
I
V
GS
= +22/−8 V, V = 0 V
250
GSS
DS
Gate Threshold Voltage
V
R
V
= V , I = 25 mA
1.8
2.8
4.3
V
V
GS(TH)
GS
DS
D
Recommended Gate Voltage
Drain−to−Source On Resistance
V
GOP
−5
+18
V
GS
V
GS
V
GS
V
DS
= 15 V, I = 75 A, T = 25°C
15
12
16
42
mW
DS(on)
D
J
= 18 V, I = 75 A, T = 25°C
18
D
J
= 18 V, I = 75 A, T = 175°C
D
J
Forward Transconductance
g
FS
= 10 V, I = 75 A
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C
V
V
= 0 V, f = 1 MHz,
= 325 V
4689
424
37
pF
ISS
GS
DS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Total Gate Charge
C
Q
V
= −5/18 V, V = 520 V,
283
72
nC
G(TOT)
GS
DS
I
= 75 A
D
Gate−to−Source Charge
Gate−to−Drain Charge
Q
Q
GS
64
GD
f = 1 MHz
1.6
W
Gate−Resistance
R
G
SWITCHING CHARACTERISTICS
Turn−On Delay Time
t
V
D
= −5/18 V, V = 400 V,
23
26
ns
d(ON)
GS
DS
I
= 75 A, R = 2.2 W,
G
Rise Time
t
r
Inductive Load
Turn−Off Delay Time
t
49
d(OFF)
Fall Time
t
9.6
167
276
443
f
Turn−On Switching Loss
Turn−Off Switching Loss
Total Switching Loss
E
mJ
ON
E
E
OFF
TOT
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−Source Diode Forward
I
V
GS
V
GS
V
GS
= −5 V, T = 25°C
111
422
A
A
V
SD
J
Current
Pulsed Drain−Source Diode Forward
Current (Note 3)
I
= −5 V, T = 25°C
J
SDM
Forward Diode Voltage
V
= −5 V, I = 75 A, T = 25°C
4.8
SD
SD
J
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