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NCR169D_05 参数 Datasheet PDF下载

NCR169D_05图片预览
型号: NCR169D_05
PDF下载: 下载PDF文件 查看货源
内容描述: 通用敏感栅硅控整流器 [General Purpose Sensitive Gate Silicon Controlled Rectifier]
分类和应用:
文件页数/大小: 8 页 / 70 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NCR169D
General Purpose
Sensitive Gate
Silicon Controlled Rectifier
Reverse Blocking Thyristor
PNPN device designed for line-powered general purpose
applications such as relay and lamp drivers, small motor controls, gate
drivers for larger thyristors, and sensing and detection circuits.
Supplied in a cost effective plastic TO-226AA package.
Features
http://onsemi.com
Sensitive Gate Allows Direct Triggering by Microcontrollers and
Other Logic Circuits
On−State Current Rating of 0.8 Amperes RMS at 80°C
Surge Current Capability − 10 Amperes
Immunity to dV/dt − 20 V/μsec Minimum at 110°C
Glass-Passivated Surface for Reliability and Uniformity
Device Marking: NCR169D, Date Code
Pb−Free Packages are Available
SCR
0.8 AMPERES RMS
400 VOLTS
G
A
K
MARKING
DIAGRAM
NCR
169D
ALYWWG
G
K
G
A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1.)
(T
J
=
*40
to 110°C, Sine Wave, 50 to
60 Hz; Gate Open)
On-State RMS Current
(T
C
= 80°C) 180° Conduction Angles
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz,
T
J
= 25°C)
Circuit Fusing Consideration (t = 10 ms)
Forward Peak Gate Power
(T
A
= 25°C, Pulse Width
v
1.0
μ
s)
Forward Average Gate Power
(T
A
= 25°C, t = 20 ms)
Forward Peak Gate Current
(T
A
= 25°C, Pulse Width
v
1.0
μ
s)
Reverse Peak Gate Voltage
(T
A
= 25°C, Pulse Width
v
1.0
μ
s)
Operating Junction Temperature Range
@ Rate V
RRM
and V
DRM
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
Value
400
Unit
Volts
0.8
10
Amp
Amps
TO−92
(TO−226AA)
CASE 029
STYLE 10
1
2
3
I
2
t
P
GM
P
G(AV)
I
GM
V
GRM
T
J
T
stg
0.415
0.1
0.10
1.0
5.0
−40 to
110
−40 to
150
A
2
s
Watt
Watt
Amp
Volts
A
= Assembly Location
L
= Wafer Lot
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
°C
°C
1
2
3
Cathode
Gate
Anode
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
©
Semiconductor Components Industries, LLC, 2005
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
October, 2005 − Rev. 1
Publication Order Number:
NCR169D/D