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NCP562SQ30T1G 参数 Datasheet PDF下载

NCP562SQ30T1G图片预览
型号: NCP562SQ30T1G
PDF下载: 下载PDF文件 查看货源
内容描述: 80毫安CMOS低Iq低压差稳压器 [80 mA CMOS Low Iq Low-Dropout Voltage Regulator]
分类和应用: 稳压器
文件页数/大小: 10 页 / 65 K
品牌: ONSEMI [ ONSEMI ]
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NCP562, NCP563  
ELECTRICAL CHARACTERISTICS  
(V = V  
+ 1.0 V, V = V , C = 1.0 m F, C = 1.0 m F, T = 25°C, unless otherwise noted.)  
enable in in out J  
in  
out(nom.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Output Voltage (TA = 25°C, I = 1.0 mA)  
V
out  
V
out  
1.5 V  
1.8 V  
2.5 V  
2.7 V  
2.8 V  
3.0 V  
3.3 V  
5.0 V  
1.455  
1.746  
2.425  
2.646  
2.744  
2.940  
3.234  
4.9  
1.5  
1.8  
2.5  
2.7  
2.8  
3.0  
3.3  
5.0  
1.545  
1.854  
2.575  
2.754  
2.856  
3.060  
3.366  
5.1  
Line Regulation  
Reg  
mV  
line  
1.5 V−4.4 V (V = V  
+ 1.0 V to 6.0 V  
10  
10  
20  
20  
in  
o(nom.)  
4.5 V−5.0 V (V = 5.5 V to 6.0 V)  
in  
Load Regulation (I = 10 mA to 80 mA)  
Reg  
20  
40  
mV  
mA  
out  
load  
Output Current (V = (V at I = 80 mA) −3.0%)  
I
o(nom.)  
out  
out  
out  
1.5 V to 3.9 V (V = V  
+ 2.0 V)  
80  
80  
280  
280  
in  
out(nom.)  
4.0 V−5.0 V (V = 6.0 V)  
in  
Dropout Voltage (T = −40°C to 85°C, I = 80 mA, Measured at  
V −V  
in out  
mV  
A
out  
V
−3.0%)  
out  
1.5 V−1.7 V  
1.8 V−2.4 V  
2.5 V−2.6 V  
2.7 V−2.9 V  
3.0 V−3.2 V  
3.3 V−4.9 V  
5.0 V  
550  
400  
250  
230  
200  
190  
140  
800  
550  
400  
400  
350  
350  
250  
Quiescent Current  
(Enable Input = 0 V)  
I
Q
m
A
0.1  
2.5  
1.0  
6.0  
(Enable Input = V , I = 1.0 mA to I  
)
in out  
o(nom.)  
Output Short Circuit Current  
I
mA  
out(max)  
1.5 V to 3.9 V (V = V  
+ 2.0 V)  
150  
150  
300  
300  
600  
600  
in  
nom  
4.0 V−5.0 V (V = 6.0 V)  
in  
Output Voltage Noise (f = 100 Hz to 100 kHz, V = 3.0 V)  
V
n
100  
m
V
r
m
s
out  
Enable Input Threshold Voltage (NCP562 ONLY)  
(Voltage Increasing, Output Turns On, Logic High)  
(Voltage Decreasing, Output Turns Off, Logic Low)  
V
th(en)  
V
1.3  
0.3  
Output Voltage Temperature Coefficient  
T
C
"100  
ppm/°C  
3. Maximum package power dissipation limits must be observed.  
T
*T  
A
qJA  
J(max)  
PD +  
R
4. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.  
http://onsemi.com  
3
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