MURS120T3 Series
MAXIMUM RATINGS
MURS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non−Repetitive Peak Surge Current, (Surge applied
at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J
105T3
50
110T3
100
115T3
150
120T3
200
140T3
400
160T3
600
Unit
V
1.0 @ T
L
= 155°C
2.0 @ T
L
= 145°C
40
*65
to +175
1.0 @ T
L
= 150°C
2.0 @ T
L
= 125°C
35
A
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
MURS
Rating
Thermal Resistance, Junction−to−Lead
(T
L
= 25°C)
Symbol
R
qJL
105T3
110T3
115T3
13
120T3
140T3
160T3
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25°C)
(i
F
= 1.0 A, T
J
= 150°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 25°C)
(Rated DC Voltage, T
J
= 150°C)
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/ms)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
v
2.0%.
v
F
0.875
0.71
i
R
2.0
50
t
rr
35
25
t
fr
25
75
50
50
ns
5.0
150
ns
1.25
1.05
mA
V
DEVICE MARKING AND ORDERING INFORMATION
Device
MURS105T3
MURS105T3G
MURS110T3
MURS110T3G
MURS115T3
MURS115T3G
MURS120T3
MURS120T3G
MURS140T3
MURS140T3G
MURS160T3
MURS160T3G
U1J
U1G
U1D
U1C
U1B
U1A
Marking
Package
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
SMB
SMB
(Pb−Free)
2500 Units / Tape & Reel
Shipping
†
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
ONSEMI [ ON SEMICONDUCTOR ]
