MPSA18
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector−Emitter Breakdown Voltage (Note 2)
V
Vdc
Vdc
(BR)CEO
(BR)CBO
(BR)EBO
(I = 10 mAdc, I = 0)
45
45
6.5
−
−
−
−
−
C
B
Collector−Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
C
E
Emitter−Base Breakdown Voltage
(I = 10 mAdc, I = 0)
Vdc
−
−
E
C
Collector Cutoff Current
(V = 30 Vdc, I = 0)
I
nAdc
CBO
1.0
50
CB
E
ON CHARACTERISTICS (Note 2)
DC Current Gain
h
FE
−
(I = 10 mAdc, V = 5.0 Vdc)
400
500
500
500
580
850
1100
1150
−
−
−
C
CE
(I = 100 mAdc, V = 5.0 Vdc)
C
CE
(I = 1.0 mAdc, V = 5.0 Vdc)
C
CE
1500
(I = 10 mAdc, V = 5.0 Vdc)
C
CE
Collector−Emitter Saturation Voltage
(I = 10 mAdc, I = 0.5 mAdc)
V
Vdc
Vdc
CE(sat)
−
−
−
0.08
0.2
0.3
C
B
(I = 50 mAdc, I = 5.0 mAdc)
C
B
Base−Emitter On Voltage
(I = 1.0 mAdc, V = 5.0 Vdc)
V
BE(on)
−
0.6
0.7
C
CE
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
f
MHz
pF
T
(I = 1.0 mAdc, V = 5.0 Vdc, f = 100 MHz)
100
−
160
1.7
5.6
−
C
CE
Collector−Base Capacitance
(V = 5.0 Vdc, I = 0, f = 1.0 MHz)
C
C
cb
eb
3.0
6.5
CB
E
Emitter−Base Capacitance
pF
(V = 0.5 Vdc, I = 0, f = 1.0 MHz)
−
EB
C
Noise Figure
NF
dB
(I = 100 mAdc, V = 5.0 Vdc, R = 10 kW, f = 1.0 kHz)
−
−
0.5
4.0
1.5
−
C
CE
S
(I = 100 mAdc, V = 5.0 Vdc, R = 1.0 kW, f = 100 Hz)
C
CE
S
Equivalent Short Circuit Noise Voltage
(I = 100 mAdc, V = 5.0 Vdc, R = 1.0 kW, f = 100 Hz)
V
T
Ǹ
nVń Hz
−
6.5
−
C
CE
S
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
http://onsemi.com
2
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