MMBV3401LT1G
Silicon Pin Diode
This device is designed primarily for VHF band switching
applications but is also suitable for use in general−purpose switching
circuits. Supplied in a Surface Mount package.
Features
•
Rugged PIN Structure Coupled with Wirebond Construction
http://onsemi.com
for Optimum Reliability
•
Low Capacitance
−
0.7 pF (Typ) at V
R
= 20 Vdc
•
Very Low Series Resistance at 100 MHz
0.34
W
(Typ) @ I
F
= 10 mAdc
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
3
Cathode
1
Anode
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
V
R
P
D
Value
35
200
2.0
+125
−55
to +150
Unit
Vdc
mW
mW/°C
°C
°C
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
MARKING DIAGRAM
4D M
G
G
1
4D
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
T
J
T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device
MMBV3401L
T1G
MMBV3401L
T3G
Package
SOT−23
(Pb−Free)
Shipping
†
3000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2009
August, 2009
−
Rev. 6
1
Publication Order Number:
MMBV3401LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
