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MMBTA92LT1G 参数 Datasheet PDF下载

MMBTA92LT1G图片预览
型号: MMBTA92LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管PNP硅 [High Voltage Transistors PNP Silicon]
分类和应用: 晶体小信号双极晶体管光电二极管高压PC
文件页数/大小: 4 页 / 102 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号MMBTA92LT1G的Datasheet PDF文件第1页浏览型号MMBTA92LT1G的Datasheet PDF文件第3页浏览型号MMBTA92LT1G的Datasheet PDF文件第4页  
MMBTA92LT1G, MMBTA93LT1G  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage (Note 3)  
(I = 1.0 mAdc, I = 0)  
V
Vdc  
(BR)CEO  
(BR)CBO  
(BR)EBO  
MMBTA92  
MMBTA93  
300  
200  
C
B
CollectorBase Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
Vdc  
MMBTA92  
MMBTA93  
300  
200  
C
E
EmitterBase Breakdown Voltage  
(I = 100 mAdc, I = 0)  
5.0  
Vdc  
E
C
Collector Cutoff Current  
(V = 200 Vdc, I = 0)  
I
mAdc  
CBO  
MMBTA92  
MMBTA93  
0.25  
0.25  
CB  
E
(V = 160 Vdc, I = 0)  
CB  
E
Emitter Cutoff Current  
(V = 3.0 Vdc, I = 0)  
I
0.1  
mAdc  
EBO  
EB  
C
ON CHARACTERISTICS (Note 3)  
DC Current Gain  
h
FE  
(I = 1.0 mAdc, V = 10 Vdc)  
Both Types  
Both Types  
25  
40  
C
CE  
(I = 10 mAdc, V = 10 Vdc)  
C
CE  
(I = 30 mAdc, V = 10 Vdc)  
MMBTA92  
MMBTA93  
25  
25  
C
CE  
CollectorEmitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
Vdc  
Vdc  
CE(sat)  
BE(sat)  
MMBTA92  
MMBTA93  
0.5  
0.5  
C
B
BaseEmitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
0.9  
C
B
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
50  
MHz  
pF  
T
(I = 10 mAdc, V = 20 Vdc, f = 100 MHz)  
C
CE  
CollectorBase Capacitance  
(V = 20 Vdc, I = 0, f = 1.0 MHz)  
C
cb  
MMBTA92  
MMBTA93  
6.0  
8.0  
CB  
E
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.  
300  
V
= 10 Vdc  
CE  
T = +125°C  
J
250  
200  
25°C  
150  
-55°C  
100  
50  
0
0.1  
1.0  
10  
100  
I , COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
http://onsemi.com  
2