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MMBTA92LT1G 参数 Datasheet PDF下载

MMBTA92LT1G图片预览
型号: MMBTA92LT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管( PNP硅) [High Voltage Transistors(PNP Silicon)]
分类和应用: 晶体小信号双极晶体管光电二极管高压PC
文件页数/大小: 4 页 / 57 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBTA92LT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 3)
(I
C
= −1.0 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= −100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= −100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= −200 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= −3.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= −1.0 mAdc, V
CE
= −10 Vdc)
(I
C
= −10 mAdc, V
CE
= −10 Vdc)
(I
C
= −30 mAdc, V
CE
= −10 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
Base−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= −20 Vdc, I
E
= 0, f = 1.0 MHz)
3. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
f
T
C
cb
6.0
50
MHz
pF
h
FE
25
40
25
V
CE(sat)
V
BE(sat)
−0.5
−0.9
Vdc
Vdc
V
(BR)CEO
−300
V
(BR)CBO
−300
V
(BR)EBO
I
CBO
I
EBO
−0.25
−0.1
mAdc
−5.0
Vdc
mAdc
Vdc
Vdc
Symbol
Min
Max
Unit
http://onsemi.com
2