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MMBT5550 参数 Datasheet PDF下载

MMBT5550图片预览
型号: MMBT5550
PDF下载: 下载PDF文件 查看货源
内容描述: 高压晶体管NPN硅 [High Voltage Transistors NPN Silicon]
分类和应用: 晶体晶体管高压IOT
文件页数/大小: 6 页 / 118 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT5550LT1G, MMBT5551LT1G
1.10
V
BE(sat)
, Base-Emitt Saturation Voltage (V)
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
150°C
25°C
I
C
/I
B
= 10
-55°C
V
BE(on)
, Base-Emitter Voltage (V)
1.10
1.00
0.90
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.0001
0.001
0.01
I
C
, COLLECTOR CURRENT (A)
0.1
150°C
25°C
V
CE
= 10 V
-55°C
Figure 5. V
BE(sat)
2.5
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
2.0
1.5
C, CAPACITANCE (pF)
1.0
0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.1
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10 20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
q
VB
for V
BE(sat)
q
VC
for V
CE(sat)
T
J
= - 55°C to +135°C
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
Figure 6. V
BE(on)
T
J
= 25°C
C
ibo
C
obo
0.3
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 7. Temperature Coefficients
Figure 8. Capacitances
10.2 V
V
in
10
ms
INPUT PULSE
t
r
, t
f
10 ns
DUTY CYCLE = 1.0%
V
BB
- 8.8 V
100
0.25
mF
R
B
5.1 k
V
in
100
1N914
V
CC
30 V
3.0 k
R
C
V
out
Values Shown are for I
C
@ 10 mA
Figure 9. Switching Time Test Circuit
http://onsemi.com
4