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MMBT4401LT3G 参数 Datasheet PDF下载

MMBT4401LT3G图片预览
型号: MMBT4401LT3G
PDF下载: 下载PDF文件 查看货源
内容描述: 开关晶体管 [Switching Transistor]
分类和应用: 晶体开关小信号双极晶体管光电二极管
文件页数/大小: 7 页 / 151 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT4401LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage (Note 3)
Collector
−Base
Breakdown Voltage
Emitter
−Base
Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(I
C
= 0.1 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 150 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 2.0 Vdc)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 150 mAdc, I
B
= 15 mAdc)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 20 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
h
FE
20
40
80
100
40
0.75
300
0.4
0.75
0.95
1.2
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 0.1 mAdc, I
E
= 0)
(I
E
= 0.1 mAdc, I
C
= 0)
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
(V
CE
= 35 Vdc, V
EB
= 0.4 Vdc)
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BEV
I
CEX
40
60
6.0
0.1
0.1
Vdc
Vdc
Vdc
mAdc
mAdc
Symbol
Min
Max
Unit
Collector
−Emitter
Saturation Voltage
V
CE(sat)
Vdc
Base
−Emitter
Saturation Voltage
V
BE(sat)
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current
−Gain −
Bandwidth Product
Collector−Base Capacitance
Emitter−Base Capacitance
Input Impedance
Voltage Feedback Ratio
Small
−Signal
Current Gain
Output Admittance
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V
CC
= 30 Vdc, V
EB
= 2.0 Vdc,
I
C
= 150 mAdc, I
B1
= 15 mAdc)
(V
CC
= 30 Vdc, I
C
= 150 mAdc,
I
B1
= I
B2
= 15 mAdc)
t
d
t
r
t
s
t
f
15
20
225
30
ns
f
T
C
cb
C
eb
h
ie
h
re
h
fe
h
oe
250
1.0
0.1
40
1.0
6.5
30
15
8.0
500
30
MHz
pF
pF
kW
X 10
4
mmhos
ns
3. Pulse Test: Pulse Width
300
ms,
Duty Cycle
2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
+ 30 V
+16 V
0
- 2.0 V
1.0 to 100
ms,
DUTY CYCLE
2.0%
1.0 kW
< 2.0 ns
200
W
+16 V
0
C
S
* < 10 pF
-14 V
< 20 ns
1.0 kW
C
S
* < 10 pF
1.0 to 100
ms,
DUTY CYCLE
2.0%
+ 30 V
200
W
- 4.0 V
Scope rise time < 4.0 ns
*Total shunt capacitance of test jig connectors, and oscilloscope
Figure 1. Turn−On Time
Figure 2. Turn−Off Time
http://onsemi.com
2