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MMBT3906LT1 参数 Datasheet PDF下载

MMBT3906LT1图片预览
型号: MMBT3906LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管PNP硅 [General Purpose Transistor PNP Silicon]
分类和应用: 晶体晶体管光电二极管
文件页数/大小: 7 页 / 97 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBT3906LT1
TYPICAL STATIC CHARACTERISTICS
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
T
J
= +125°C
1.0
0.7
0.5
0.3
0.2
- 55°C
+25°C
V
CE
= 1.0 V
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
20
30
50
70
100
200
Figure 13. DC Current Gain
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
0.8
I
C
= 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
I
B
, BASE CURRENT (mA)
0.7
1.0
2.0
3.0
5.0
7.0
10
Figure 14. Collector Saturation Region
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
1.0
0.5
0
- 0.5
+25°C TO +125°C
- 1.0
- 55°C TO +25°C
- 1.5
- 2.0
q
VB
FOR V
BE(sat)
q
VC
FOR V
CE(sat)
+25°C TO +125°C
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
0.6
- 55°C TO +25°C
0.4
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0
1.0
2.0
50
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
100
200
0
20
40
60
80 100 120 140
I
C
, COLLECTOR CURRENT (mA)
160
180 200
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
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