February 2008
MMBT3904T
NPN Epitaxial Silicon Transistor
Features
C
• General purpose amplifier transistor.
• Ultra-Small Surface Mount Package for all types.
• Suitable for general switching & amplification
• Well suited for portable application
E
B
Marking : A04
SOT-523F
• As complementary type, PNP MMBT3906T is recommended
Absolute Maximum Ratings Ta = 25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
60
Unit
V
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6
V
200
mA
°C
°C
TJ
Junction Temperature
150
TSTG
Storage Temperature Range
-55 ~ 150
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
PC
Parameter
Collector Power Dissipation, by RθJA
Thermal Resistance, Junction to Ambient
Max
250
Unit
mW
RθJA
500
°C/W
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Test Condition
IC = 10μA, IE = 0
Min.
60
Max.
Unit
V
BVCEO
BVEBO
ICEX
IC = 1mA, IB = 0
40
V
IE = 10μA, IC = 0
6
V
VCE = 60V, VEB(OFF) = 3V
50
nA
hFE
DC Current Gain
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
40
70
100
60
300
30
VCE (sat)
VBE (sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.2
0.3
V
V
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.65
300
0.85
0.95
V
V
fT
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Delay Time
VCE = 20V, IC = 10mA, f = 100MHz
VCB = 5V, IE = 0, f = 1MHz
MHz
pF
pF
ns
Cob
Cib
td
6
15
35
35
200
50
VEB = 0.5V, IC = 0, f = 1MHz
VCC = 3V, IC = 10mA
IB1 =- IB2 = 1mA
tr
Rise Time
ns
ts
Storage Time
ns
tf
Fall Time
ns
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
www.fairchildsemi.com
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