MMBT2222ATT1
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
Features
http://onsemi.com
COLLECTOR
3
1
BASE
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
1
2
3
2
EMITTER
CASE 463
SOT−416/SC−75
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Operating and Storage Junction
Temperature Range
Symbol
P
D
R
qJA
T
J
, T
stg
Max
150
833
−55
to +150
Unit
mW
°C/W
°C
1
1P
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
1P M
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
ORDERING INFORMATION
Device
Package
Shipping
†
MMBT2222ATT1G SOT−416 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 4
1
Publication Order Number:
MMBT2222ATT1/D
ONSEMI [ ON SEMICONDUCTOR ]
