MMBT2222ATT1
Preferred Device
General Purpose Transistor
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−416/SC−75 package which
is designed for low power surface mount applications.
http://onsemi.com
COLLECTOR
3
MAXIMUM RATINGS
(T
A
= 25°C)
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
3
Symbol
P
D
R
θJA
T
J
, T
stg
Max
150
833
−55 to
+150
Unit
mW
1
°C/W
°C
CASE 463
SOT−416/SC−75
STYLE 1
2
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation (Note 1)
T
A
= 25°C
Thermal Resistance,
Junction−to−Ambient
Operating and Storage Junction
Temperature Range
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
recommended footprint.
MARKING DIAGRAM
1P M
1
1P
M
= Specific Device Code
= Date Code
ORDERING INFORMATION
Device
MMBT2222ATT1
Package
SOT−416
Shipping
†
3000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 2
Publication Order Number:
MMBT2222ATT1/D
ONSEMI [ ON SEMICONDUCTOR ]
