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MMBD914LT1 参数 Datasheet PDF下载

MMBD914LT1图片预览
型号: MMBD914LT1
PDF下载: 下载PDF文件 查看货源
内容描述: 高速开关二极管 [High-Speed Switching Diode]
分类和应用: 整流二极管开关光电二极管
文件页数/大小: 4 页 / 82 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MMBD914LT1
820
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
OUTPUT
PULSE
GENERATOR
50
INPUT
SAMPLING
OSCILLOSCOPE
VR
INPUT SIGNAL
90%
IR
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
0.1
µF
tr
10%
tp
t
IF
trr
t
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes:
2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes:
3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
I F, FORWARD CURRENT (mA)
TA = 85°C
10
10
TA = 150°C
I R , REVERSE CURRENT (
m
A)
TA = –40°C
1.0
TA = 125°C
TA = 25°C
1.0
0.1
TA = 85°C
TA = 55°C
0.01
TA = 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VF, FORWARD VOLTAGE (VOLTS)
0.001
0
10
20
30
40
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C D , DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data