MMBD7000LT1
Preferred Device
Dual Switching Diode
Features
•
Pb−Free Packages are Available
http://onsemi.com
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
1
ANODE
3
CATHODE/ANODE
2
CATHODE
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
1
2
SOT−23 (TO−236AB)
CASE 318−08
STYLE 8
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1)T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to
Ambient
Total Device Dissipation
Alumina Substrate, (Note 2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
qJA
P
D
556
300
Unit
mW
mW/°C
°C/W
mW
1
M5C M
MARKING DIAGRAM
2.4
R
qJA
T
J
, T
stg
417
−55 to +150
mW/°C
°C/W
°C
M5C
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
1. FR−5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBD7000LT1
MMBD7000LT1G
MMBD7000LT3
MMBD7000LT3G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000 Tape & Reel
3000 Tape & Reel
10,000 Tape & Reel
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
April, 2005 − Rev. 3
Publication Order Number:
MMBD7000LT1/D
ONSEMI [ ON SEMICONDUCTOR ]
