MMBD6050LT1G
Switching Diode
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
MAXIMUM RATINGS
Rating
Symbol
Value
70
Unit
Vdc
3
CATHODE
1
ANODE
Reverse Voltage
Forward Current
V
R
I
F
200
mAdc
Peak Forward Surge Current
I
500
mAdc
FM(surge)
THERMAL CHARACTERISTICS
3
Characteristic
Symbol
Max
Unit
1
Total Device Dissipation FR−5 Board,
P
D
2
(Note 1) T = 25°C
225
1.8
mW
A
Derate above 25°C
mW/°C
SOT−23 (TO−236)
CASE 318
Thermal Resistance, Junction−to−Ambient
R
q
JA
556
°C/W
STYLE 8
Total Device Dissipation Alumina
P
D
Substrate, (Note 2) T = 25°C
300
2.4
mW
mW/°C
A
Derate above 25°C
MARKING DIAGRAM
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
R
417
°C/W
°C
q
JA
T , T
J
−55 to +150
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
5A M G
G
1
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
5A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Rating
OFF CHARACTERISTICS
Reverse Breakdown Voltage
Symbol Min Max
Unit
V
R
70
−
Vdc
mAdc
Vdc
ORDERING INFORMATION
(I
= 100 mAdc)
(BR)
†
Device
Package
Shipping
Reverse Voltage Leakage Current
(V = 50 Vdc)
R
I
F
−
0.1
MMBD6050LT1G SOT−23 3,000 / Tape & Reel
(Pb−Free)
Forward Voltage
I
FM(surge)
(I = 1.0 mAdc)
0.55 0.7
0.85 1.1
F
MMBD6050LT3G SOT−23 10,000/Tape & Reel
(Pb−Free)
(I = 100 mAdc)
F
Reverse Recovery Time (Figure 1)
I
F
−
4.0
ns
(I = I = 10 mAdc, I = 1.0 mAdc)
F
R
R(REC)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Capacitance
(V = 0 V)
I
−
2.5
pF
FM(surge)
R
©
Semiconductor Components Industries, LLC, 2009
1
Publication Order Number:
August, 2009 − Rev. 5
MMBD6050LT1/D
ONSEMI [ ONSEMI ]
