MJE350
200
T
J
= 150°C
25°C
−55
°C
1.0
T
J
= 25°C
0.8
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 10
0.6
V
BE
@ V
CE
= 10 V
hFE , DC CURRENT GAIN
100
70
50
30
20
0.4
I
C
/I
B
= 10
V
CE
= 2.0 V
V
CC
= 10 V
20
30
50
70
100
200
300
500
0.2
V
CE(sat)
0
5.0 7.0
10
20
30
50
70
100
I
C
/I
B
= 5.0
200 300
500
I
C
, COLLECTOR CURRENT (mA)
10
5.0 7.0 10
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
IC, COLLECTOR CURRENT (mA)
1000
700
500
300
200
100
70
50
30
20
10
20
1.0 ms
dc
+1.2
+0.8
+0.4
0
−0.4
−0.8
−1.2
−1.6
−2.0
−2.4
−2.8
5.0 7.0
10
q
VB
for V
BE
−55
°C
to +25°C
20 30
50 70 100
I
C
, COLLECTOR CURRENT (mA)
200 300
500
*q
VC
for V
CE(sat)
*APPLIES FOR I
C
/I
B
< h
FE/4
+100
°C
to +150°C
+25
°C
to +100°C
100
ms
−55
°C
to +25°C
+25
°C
to +150°C
500
ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
SECOND BREAKDOWN LIMITED
30
50
70
100
200
300 400
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. Active−Region Safe Operating Area
Figure 4. Temperature Coefficients
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 3 is based on T
J(pk)
= 150_C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
v
150_C. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
20
PD, POWER DISSIPATION (WATTS)
16
12
8.0
4.0
0
0
20
40
60
80
100
120
T
C
, CASE TEMPERATURE (°C)
140
160
Figure 5. Power Derating
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