MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
ACTIVE−REGION SAFE OPERATING AREA
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
dc
5.0 ms
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
MJE171
MJE172
2.0 3.0
5.0
10
20 30
50
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
ms
500
ms
10
5.0
2.0
1.0
0.5
0.2
0.1
5.0 ms
dc
100
ms
500
ms
0.05
0.02
0.01
1.0
0.05
0.02
T
J
= 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @
T
C
= 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW MJE181
RATED V
CEO
MJE182
2.0 3.0
5.0 7.0 10
20 30
50 70 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
0.01
1.0
Figure 5. MJE171, MJE172
Figure 6. MJE181, MJE182
There are two limitations on the power handling ability of
a transistor − average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on T
J(pk)
= 150°C; T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
T
J(pk)
t
150°C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperature, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
10K
5K
3K
2K
1K
t, TIME (ns)
500
300
200
100
50
30
20
10
0.01
0.02 0.03 0.05 0.1 0.2 0.3
0.5
1
2
3
5
t
f
NPN MJE181/182
PNP MJE171/172
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
100
70
C, CAPACITANCE (pF)
50
PNP MJE171/MJE172
NPN MJE181/MJE182
C
ib
T
J
= 25°C
30
20
C
ob
10
10
0.5 0.7 1.0
I
C
, COLLECTOR CURRENT (AMPS)
2.0 3.0
5.0 7.0 10
20
V
R
, REVERSE VOLTAGE (VOLTS)
30
50
Figure 7. Turn−Off Time
Figure 8. Capacitance
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