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MJE13005 参数 Datasheet PDF下载

MJE13005图片预览
型号: MJE13005
PDF下载: 下载PDF文件 查看货源
内容描述: 4安培NPN硅功率晶体管400伏 - 75瓦 [4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS − 75 WATTS]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 105 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MJE13005
Preferred Device
SWITCHMODEt Series
NPN Silicon Power
Transistors
These devices are designed for high−voltage, high−speed power
switching inductive circuits where fall time is critical. They are
particularly suited for 115 and 220 V SWITCHMODE applications
such as Switching Regulator’s, Inverters, Motor Controls,
Solenoid/Relay drivers and Deflection circuits.
Features
http://onsemi.com
V
CEO(sus)
400 V
Reverse Bias SOA with Inductive Loads @ T
C
= 100_C
Inductive Switching Matrix 2 to 4 A, 25 and 100_C t
c
@ 3A,
100_C is 180 ns (Typ)
700 V Blocking Capability
SOA and Switching Applications Information
Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Emitter Current
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
Symbol
V
CEO(sus)
V
CEV
V
EBO
I
C
I
CM
I
B
I
BM
I
E
I
EM
P
D
P
D
T
J
, T
stg
Value
400
700
9
4
8
2
4
6
12
2
16
75
600
−65 to
+150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
4 AMPERE
NPN SILICON
POWER TRANSISTOR
400 VOLTS − 75 WATTS
1
2
TO−220AB
CASE 221A−09
STYLE 1
3
MARKING DIAGRAM
MJE13005G
W
W/_C
W
W/_C
_C
A
Location
Y
WW
G
age
Device
MJE13005
MJE13005G
= Assembly
= Year
= Work Week
= Pb−Free Pack-
AY WW
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJA
R
qJC
T
L
Max
62.5
1.67
275
Unit
_C/W
_C/W
_C
ORDERING INFORMATION
Package
TO−220
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
Preferred
devices are recommended choices for future use
and best overall value.
1
February, 2006 − Rev. 7
Publication Order Number:
MJE13005/D