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MCR12LNG 参数 Datasheet PDF下载

MCR12LNG图片预览
型号: MCR12LNG
PDF下载: 下载PDF文件 查看货源
内容描述: 可控硅整流器反向阻断晶闸管 [Silicon Controlled Rectifiers Reverse Blocking Thyristors]
分类和应用: 可控硅整流器
文件页数/大小: 5 页 / 57 K
品牌: ONSEMI [ ONSEMI ]
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MCR12LD, MCR12LM, MCR12LN  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
Thermal Resistance,  
Junction−to−Case  
Junction−to−Ambient  
R
R
2.2  
62.5  
°C/W  
q
JC  
JA  
q
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds  
T
260  
°C  
L
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Peak Repetitive Forward or Reverse Blocking Current  
(V = Rated V and V ; Gate Open)  
T = 25°C  
T = 125°C  
J
I
,
DRM  
0.01  
2.0  
mA  
J
I
RRM  
D
DRM  
RRM  
ON CHARACTERISTICS  
Peak Forward On−State Voltage (Note 2)  
V
2.2  
8.0  
20  
V
TM  
(I = 24 A)  
TM  
Gate Trigger Current (Continuous dc)  
I
2.0  
4.0  
4.0  
10  
mA  
mA  
GT  
(V = 12 V, R = 100 W)  
D
L
Holding Current  
I
H
(V = 12 V, Gate Open, Initiating Current = 200 mA)  
D
Latch Current (V = 12 V, Ig = 20 mA)  
I
6.0  
0.5  
12  
30  
mA  
V
D
L
Gate Trigger Voltage (Continuous dc)  
V
0.65  
0.8  
GT  
(V = 12 V, R = 100 W)  
D
L
DYNAMIC CHARACTERISTICS  
Critical Rate of Rise of Off−State Voltage  
dv/dt  
di/dt  
100  
250  
V/ms  
A/ms  
(V = Rated V  
, Exponential Waveform, Gate Open, T = 125°C)  
DRM J  
D
Critical Rate of Rise of On−State Current  
50  
IPK = 50 A; Pw = 40 msec; diG/dt = 1 A/msec, Igt = 50 mA  
2. Indicates Pulse Test: Pulse Width v1.0 ms, Duty Cycle v2%.  
http://onsemi.com  
2
 
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