MC74VHC1GT125
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
q
JA
T
L
T
J
T
stg
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power Dissipation in Still Air
Thermal Resistance
Lead Temperature, 1 mm from Case for 10 s
Junction Temperature Under Bias
Storage Temperature
ESD Withstand Voltage
Human Body Model (Note 1)
Machine Model (Note 2)
Charged Device Model (Note 3)
Above V
CC
and Below GND at 125°C (Note 4)
SC−88A, TSOP−5
SC−88A, TSOP−5
V
OUT
< GND; V
OUT
> V
CC
V
CC
= 0
High or Low State
Characteristics
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−0.5 to V
CC
+ 0.5
−20
+20
+25
+50
200
333
260
+150
−65 to +150
> 2000
> 200
N/A
±500
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
I
Latchup
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 5.0 V
±
0.5 V
Characteristics
Min
3.0
0.0
0.0
−55
0
Max
5.5
5.5
V
CC
+125
20
Unit
V
V
V
°C
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
NORMALIZED FAILURE RATE
Junction
Temperature
5C
80
90
100
110
120
130
140
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 130
°
C
TJ = 120
°
C
TJ = 110
°
C
TJ = 100
°
C
TJ = 80
°
C
100
TIME, YEARS
TJ = 90
°
C
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
1
1
10
1000
Figure 3. Failure Rate vs. Time
Junction Temperature
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