MC74VHC1G02
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
q
JA
T
L
T
J
T
STG
V
ESD
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
CC
and GND
Power Dissipation in Still Air at 85°C
Thermal Resistance
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Storage Temperature Range
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 125°C (Note 5)
SC70−5/SC−88A
TSOP−5
SC70−5/SC−88A (Note 1)
TSOP−5
V
OUT
< GND; V
OUT
> V
CC
V
CC
= 0
High or Low State
Characteristics
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to 7.0
−0.5 to V
CC
+ 0.5
−20
+20
+25
+50
150
200
350
230
260
)150
*65
to
)150
> 2000
> 200
N/A
$500
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C
°C
°C
V
I
LATCHUP
Latchup Performance
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to JESD22−C101−A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
t
r
, t
f
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
V
CC
= 3.3 V
$
0.3 V
V
CC
= 5.0 V
$
0.5 V
Characteristics
Min
2.0
0.0
0.0
−55
0
0
Max
5.5
5.5
V
CC
+125
100
20
Unit
V
V
V
°C
ns/V
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
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