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MC33153P 参数 Datasheet PDF下载

MC33153P图片预览
型号: MC33153P
PDF下载: 下载PDF文件 查看货源
内容描述: 单IGBT栅极驱动器 [Single IGBT Gate Driver]
分类和应用: 驱动器MOSFET驱动器栅极驱动程序和接口接口集成电路光电二极管双极性晶体管栅极驱动
文件页数/大小: 13 页 / 131 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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MC33153
Single IGBT Gate Driver
The MC33153 is specifically designed as an IGBT driver for high
power applications that include ac induction motor control, brushless
dc motor control and uninterruptable power supplies. Although
designed for driving discrete and module IGBTs, this device offers a
cost effective solution for driving power MOSFETs and Bipolar
Transistors. Device protection features include the choice of
desaturation or overcurrent sensing and undervoltage detection. These
devices are available in dual−in−line and surface mount packages.
Features
http://onsemi.com
MARKING
DIAGRAMS
8
SOIC−8
D SUFFIX
CASE 751
1
33153
ALYW
G
High Current Output Stage: 1.0 A Source/2.0 A Sink
Protection Circuits for Both Conventional and Sense IGBTs
Programmable Fault Blanking Time
Protection against Overcurrent and Short Circuit
Undervoltage Lockout Optimized for IGBT’s
Negative Gate Drive Capability
Cost Effectively Drives Power MOSFETs and Bipolar Transistors
Pb−Free Packages are Available
1
V
CC
6
V
CC
V
CC
Short Circuit
Latch
S
Q
R
V
EE
Overcurrent
Latch
S
Q
R
Short Circuit
Comparator
V
CC
Overcurrent
Comparator
130 mV
65 mV
V
CC
270
mA
V
EE
V
CC
2
Current
Sense
1 Input
Kelvin
GND
1
8
PDIP−8
P SUFFIX
CASE 626
1
MC33153P
AWL
YYWWG
Fault
Output 7
A
= Assembly Location
L, WL = Wafer Lot
Y, YY = Year
W, WW = Work Week
G
or G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Current Sense
Input
Kelvin GND
V
EE
1
2
3
4
(Top View)
8 Fault Blanking/
Desaturation Input
7 Fault Output
6 V
CC
5 Drive Output
Fault Blanking/
Desaturation
Comparator
6.5 V
V
EE
Fault
8 Blanking/
Desaturation
Input
V
CC
V
CC
Input
4
V
EE
Output
Stage
Drive
5 Output
100 k
Input
V
CC
Under
Voltage
Lockout
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
V
EE
12 V/
11 V
3
V
EE
This device contains 133 active transistors.
Figure 1. Representative Block Diagram
©
Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 5
Publication Order Number:
MC33153/D